Modeling implications of channel length reduction in MOS transistors.

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Creator: 

Harper, David Hall

Date: 

1980

Subject: 

Metal Oxide Semiconductors -- Models
Transistors -- Models
Integrated Circuits -- Large Scale Integration -- Models

Language: 

English

Publisher: 

Carleton University

Thesis Degree Name: 

Doctor of Philosophy: 
Ph.D.

Thesis Degree Level: 

Doctoral

Thesis Degree Discipline: 

Engineering, Electrical

Parent Collection: 

Theses and Dissertations

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