Low temperature plasma etching for Si[sub 3]N[sub 4] waveguide applications


  • Celo, D.
  • Vandusen, R.
  • Smy, T.
  • Albert, Jacques
  • Tarr, N. G.
  • Waldron, P. D.




Highly selective and anisotropic low temperature electron cyclotron resonance plasma etching process for silicon nitride optical rib waveguide devices compatible with integrated circuit technology is presented. Etching at low temperatures (−30°C) with SF6∕O2 chemistry in combination with a silicon dioxide hard mask achieved good anisotropy with the vertical sidewalls.


AIP Publishing

Peer Review: 

Published in Peer Reviewed Journal

Faculty Name: 

Faculty of Engineering and Design

Department Name: 

Department of Electronics

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