Modeling, Dynamic Simulation and Design of Magnetic Sensors Based on Magnetic Tunnel Junction Technology
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Spintronic devices, with the integration of magnetic materials and microstructures, have been enabling people to make use of the electron spin and charge properties in many applications. Few works, however, have been carried out in modeling these devices based on magnetic tunnel junction (MTJ) technology. Accordingly, this thesis proposes a novel modeling approach as well as an iterative simulation methodology for MTJs. A more comprehensive electrical tunneling model is established for better interpreting the conductance and current generated by the electron tunneling, and this model can also facilitate the iterative simulation of the micromagnetic dynamics. Given the improved tunneling model and the iterative dynamic simulation, the electric characteristics of an MTJ with an external magnetic field can be conveniently computed. Finally, the magnetic sensor design based on the MTJ technology and the fabrication methods are presented. These works would lay a foundation for the future development of new spintronic devices.
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Copyright © 2013 the author(s). Theses may be used for non-commercial research, educational, or related academic purposes only. Such uses include personal study, research, scholarship, and teaching. Theses may only be shared by linking to Carleton University Institutional Repository and no part may be used without proper attribution to the author. No part may be used for commercial purposes directly or indirectly via a for-profit platform; no adaptation or derivative works are permitted without consent from the copyright owner.
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- 2013
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