Fabrication-Tolerant Integrable InGaAsP C-Band Polarization Rotator
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Modern communications have reached unpredicted bit rates due to rapid and accelerating research carried out in the field of Photonics. A design and simulation of a polarization rotator using III-V materials (InP/InGaAsP) with a feasible fabrication process were performed. The polarization conversion efficiency of ~98% and polarization extinction ratio of ~17.3dB over 1530nm to 1570nm wavelength (C-band) was achieved. The study was used to select the etch stop layer, visualize the state of polarization at different lengths of the device, and predict the variability of the polarization rotator over different lengths. The selected device structure provides a significant fabrication tolerance enhancement factor which consists of a one-sided tapered ridge waveguide and a deeper-etch structure on the opposite side. This work offers a practical path toward the integration of a polarization rotator in a photonic integrated chip and would pave a way for future innovation.
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Copyright © 2022 the author(s). Theses may be used for non-commercial research, educational, or related academic purposes only. Such uses include personal study, research, scholarship, and teaching. Theses may only be shared by linking to Carleton University Institutional Repository and no part may be used without proper attribution to the author. No part may be used for commercial purposes directly or indirectly via a for-profit platform; no adaptation or derivative works are permitted without consent from the copyright owner.
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- 2022
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shah-fabricationtolerantintegrableingaaspcband.pdf | 2023-05-05 | Public | Download |