High-efficiency switched-mode power amplifier using gallium nitride on silicon hemt technology

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Creator: 

Panesar, Harpreet

Date: 

2007

Subject: 

Power amplifiers -- Design and construction.
Modulation-doped field-effect transistors.
Amplifiers, Radio frequency.
Silicon-on-insulator technology.
Gallium arsenide semiconductors.
Microwave circuits.
Wireless communication systems.

Language: 

English

Publisher: 

Carleton University

Identifier: 

Proquest Record
Library Catalogue Record
https://doi.org/10.22215/etd/2007-10694

Thesis Degree Name: 

Master of Applied Science: 
M.App.Sc.

Thesis Degree Level: 

Master's

Thesis Degree Discipline: 

Engineering, Electrical

Parent Collection: 

Theses and Dissertations

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