Refractive-index changes in fused silica produced by heavy-ion implantation followed by photobleaching

Creator: 

  • Albert, Jacques
  • Malo, B.
  • Hill, K.O.
  • Johnson, D.C.

Date: 

1992-12-01

Abstract: 

The changes in refractive index, optical absorption, and volume of synthetic fused silica resulting from the implantation of germanium and silicon ions at energies of 3 and 5 MeV are reported. Implantation changes the density and generates ultraviolet color centers in the silica, which increases the refractive index at visible wavelengths by ∼1%. Irradiation of the implanted samples with 249-nm light from a KrF excimer laser photobleaches the color centers and reduces the index by more than 0.1%. Photobleaching is used to write a 4.3-μm pitch diffraction grating in the implanted silica.

Publisher: 

OSA Publishing

Peer Review: 

Published in Peer Reviewed Journal

Faculty Name: 

Faculty of Engineering and Design

Department Name: 

Department of Electronics

Items in CURVE are protected by copyright, with all rights reserved, unless otherwise indicated. They are made available with permission from the author(s).