Ion implantation-induced strong photosensitivity in high-purity fused silica: Correlation of index changes with VUV color centers


  • Verhaegen, M.
  • Brebner, J. L.
  • Allard, L. B.
  • Albert, Jacques




We have studied optical changes induced by ArF (6.4 eV/193 nm) excimer laser light illumination of high purity SiO2implanted with Si 2+ (5 MeV) at a fluence of 1015 ions/cm2. Optical absorption was measured from 3 eV (400 nm) to 8 eV (155 nm) and showed evidence of several well‐defined absorption bands. A correlation in the bleaching behavior appears to exist between the so‐called D band (located at 7.15 eV) and the well‐known B 2α band which is attributed to oxygen vacancies. Changes in the refractive index as a function of ArF illumination were measured and found to be in good quantitative agreement with a Kramers–Kronig analysis of the optical absorption data.


AIP Publishing

Peer Review: 

Published in Peer Reviewed Journal

Faculty Name: 

Faculty of Engineering and Design

Department Name: 

Department of Electronics

Items in CURVE are protected by copyright, with all rights reserved, unless otherwise indicated. They are made available with permission from the author(s).