ESD protection can adversely cause degradation of IC performance, particularly on radio frequency (RF) ICs. These types of ICs are the most affected by the introduction of ESD protection, which cause the degradation of RF parameters. As a result, reduction of the RF performance degradation is highly desired and was the focus of this study.Two 10 GHz narrow band LNAs, one with ESD and another without ESD protection were designed and implemented in 0.13 µm RFCMOS technology. The ESD protection used encompasses PI topology ESD protection, comprising the primary ESD protection diodes, LNA gate inductor, secondary ESD protection diodes, and power clamps. The desired level of ESD protection for the LNA was 2000 V for the Human Body Model (HBM).