Electrostatic Discharge Protection for a 10 GHz Low Noise Amplifier
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ESD protection can adversely cause degradation of IC performance, particularly on radio frequency (RF) ICs. These types of ICs are the most affected by the introduction of ESD protection, which cause the degradation of RF parameters. As a result, reduction of the RF performance degradation is highly desired and was the focus of this study.Two 10 GHz narrow band LNAs, one with ESD and another without ESD protection were designed and implemented in 0.13 µm RFCMOS technology. The ESD protection used encompasses PI topology ESD protection, comprising the primary ESD protection diodes, LNA gate inductor, secondary ESD protection diodes, and power clamps. The desired level of ESD protection for the LNA was 2000 V for the Human Body Model (HBM).
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Copyright © 2013 the author(s). Theses may be used for non-commercial research, educational, or related academic purposes only. Such uses include personal study, research, scholarship, and teaching. Theses may only be shared by linking to Carleton University Institutional Repository and no part may be used without proper attribution to the author. No part may be used for commercial purposes directly or indirectly via a for-profit platform; no adaptation or derivative works are permitted without consent from the copyright owner.
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machado-electrostaticdischargeprotectionfora10ghz.pdf | 2023-05-04 | Public | Download |