Reconfigurable Matching Networks for High Power GaN Microwave Amplifiers

It appears your Web browser is not configured to display PDF files. Download adobe Acrobat or click here to download the PDF file.

Click here to download the PDF file.


Aglan, Alaa Eldin Ibrahim




This thesis demonstrates the feasibility of using a GaN monolithic reconfigurable matching network to provide variable load impedance matching coverage for microwave power amplifiers operating in the X-band (8-12 GHz). The National Research Council's GaN500 (0.5 micron) HFET process, fabricated at the Canadian Photonics Fabrication Center (CPFC), is employed throughout this work. An initial investigation of various switch topologies is first conducted, showing the advantages and limitations of using single and multi-transistor switch realizations for the development of a multi-stage
programmable impedance tuner (PIT). Then, the design, optimization, fabrication and testing of a single stage of the proposed PIT structure are presented. The results show an extensive range of impedance coverage on the Smith Chart can be achieved, although this range is limited by losses. Finally, the co-integration of the resulting programmable tuners within a GaN power amplifier circuit is simulated, and its performance is studied.


Engineering - Electronics and Electrical




Carleton University

Thesis Degree Name: 

Master of Applied Science: 

Thesis Degree Level: 


Thesis Degree Discipline: 

Engineering, Electrical and Computer

Parent Collection: 

Theses and Dissertations

Items in CURVE are protected by copyright, with all rights reserved, unless otherwise indicated. They are made available with permission from the author(s).