In-situ doped p+ polysilicon as a MOS gate material.

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Creator: 

Dantu, Srilakshmi V.

Date: 

1994

Subject: 

Metal Oxide Semiconductors
Integrated Circuits

Language: 

English

Publisher: 

Carleton University

Identifier: 

Proquest Record
Library Catalogue Record
https://doi.org/10.22215/etd/1994-02827

Thesis Degree Name: 

Master of Engineering: 
M.Eng.

Thesis Degree Level: 

Master's

Thesis Degree Discipline: 

Engineering, Electrical

Parent Collection: 

Theses and Dissertations

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