Characterization of high power high efficiency gaas impati diodes in pulsed mode operation
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High power, high efficiency GaAs IMPATT diodes in pulsed mode operation are characterized in this study. Experimental results are presented for the R.F. power and frequency drift versus current and temperature characteristics when the diodes are pulsed in a very efficient, flexible microwave resonator. A novel analytical GaAs IMPATT diode model is described and used to verify the frequency drift versus time results obtained experimentally and to predict that a current frequency tuning phenomenon can be "used to minimize the frequency drift of the IMPATT diodes when operated in pulsed mode. A new pulsed constant current bias supply suitable for the high power GaAs IMPATT diodes is also described and used throughout this study.
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This work is available on request. You can request a copy at https://library.carleton.ca/forms/request-pdf-copy-thesis
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Copyright © 1978 the author(s). Theses may be used for non-commercial research, educational, or related academic purposes only. Such uses include personal study, research, scholarship, and teaching. Theses may only be shared by linking to Carleton University Institutional Repository and no part may be used without proper attribution to the author. No part may be used for commercial purposes directly or indirectly via a for-profit platform; no adaptation or derivative works are permitted without consent from the copyright owner.
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- 1978
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